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제품 정보

Wavelength 354.7 nm

Average Power 1 - 5 W

Energy per Pulse < 200 μJ

Mode (M²) TEMoo (M² < 1.3)

Beam Diameter (1/e²) See Chart

Pulse to Pulse Stability (30 - 100 kHz) < 15%

Power Stability (8 hrs. at const. temp.) < 5%

Ellipticity < 10%

Astigmatism < 0.3

MARKING PERFORMANCE

Marking Accuracy < 1.5 mrad

Marking Repeatability < 22 μrad

ELECTRICAL

Input Voltage 90 - 240 VAC

Power Consumption (max.) 900 W

Ambient Temp. (non-condensing) 10 - 35° C

PHYSICAL


용도:

 Laser Marking

 Solar Cell Processing

 Thick/Thin Film Laser Trimming

 ITO Removal

 Sapphire Scribing

 Micromachining

 Direct Write/Repair

 Micro-via Hole Drilling

 Wafer processing

 Polyimide Cutting & Drilling

 PFA Teflon Marking 

 Photo Bleaching

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Standard Model & Spec

Item name 카트 담기 download
Laser Microprocess System 카트 아이콘 PDF

스펙 설명

Wavelength 354.7 nm

Average Power 1 - 5 W

Energy per Pulse < 200 μJ

Mode (M²) TEMoo (M² < 1.3)

Beam Diameter (1/e²) See Chart

Pulse to Pulse Stability (30 - 100 kHz) < 15%

Power Stability (8 hrs. at const. temp.) < 5%

Ellipticity < 10%

Astigmatism < 0.3

MARKING PERFORMANCE

Marking Accuracy < 1.5 mrad

Marking Repeatability < 22 μrad

ELECTRICAL

Input Voltage 90 - 240 VAC

Power Consumption (max.) 900 W

Ambient Temp. (non-condensing) 10 - 35° C

PHYSICAL


용도:

 Laser Marking

 Solar Cell Processing

 Thick/Thin Film Laser Trimming

 ITO Removal

 Sapphire Scribing

 Micromachining

 Direct Write/Repair

 Micro-via Hole Drilling

 Wafer processing

 Polyimide Cutting & Drilling

 PFA Teflon Marking 

 Photo Bleaching

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